1998. 6. 15 1/3 semiconductor technical data KN4400S/4401s epitaxial planar npn transistor revision no : 1 general purpose application. switching application. features complementary to the kn4402s/4403s maximum rating (ta=25 1 ) dim millimeters 1. emitter 2. base 3. collector sot-23 a b c d e 2.93 0.20 1.30+0.20/-0.15 0.45+0.15/-0.05 2.40+0.30/-0.20 g 1.90 h j k l m n 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 0.55 0.20 min 1.00+0.20/-0.10 m j k e 1 2 3 h g a n c b d 1.30 max ll pp p7 + _ note : * package mounted on 99.5% alumina 10 ' 8 ' 0.6 j ) type name marking lot no. zta type name lot no. zua characteristic symbol rating unit collector-base voltage v cbo 60 v collector-emitter voltage v ceo 40 v emitter-base voltage v ebo 6 v collector current i c 600 ma collector power dissipation p c * 350 mw junction temperature t j 150 1 storage temperature range t stg -55 150 1 type mark KN4400S zta kn4401s zua mark spec
1998. 6. 15 2/3 KN4400S/4401s revision no : 1 electrical characteristics (ta=25 1 ) * pulse test : pulse width # 300 s, duty cycle # 2%. characteristic symbol test condition min. typ. max. unit collector cut-off current i cex v ce =35v, v eb =0.4v - - 100 na collector cut-off current i cbo v cb =60v, i e =0 - - 100 na emitter cut-off current i ebo v eb =6v, i c =0 - - 100 na collector-base breakdown voltage v (br)cbo i c =100 a, i e =0 60 - - v collector-emitter breakdown voltage v (br)ceo i c =1ma, i b =0 40 - - v emitter-base breakdown voltage v (br)ebo i e =100 a, i c =0 6.0 - - v dc current gain * kn4401s h fe (1) v ce =1v, i c =0.1ma 20 - - KN4400S h fe (1) v ce =1v, i c =1ma 20 - - kn4401s h fe (2) 40 - - KN4400S h fe (2) v ce =1v, i c =10ma 40 - - kn4401s h fe (3) 80 - - KN4400S h fe (3) v ce =1v, i c =150ma 50 - 150 kn4401s h fe (4) 100 - 300 KN4400S h fe (4) v ce =2v, i c =500ma 20 - - kn4401s h fe (5) 40 - - collector-emitter saturation voltage * v ce(sat) 1 i c =150ma, i b =15ma - - 0.4 v v ce(sat) 2 i c =500ma, i b =50ma - - 0.75 base-emitter saturation voltage * v be(sat) 1 i c =150ma, i b =15ma 0.75 - 0.95 v v be(sat) 2 i c =500ma, i b =50ma - - 1.2 transition frequency KN4400S f t v ce =10v, i c =20ma, f=100mhz 200 - - mhz kn4401s 250 - - collector output capacitance c ob v cb =5v, i e =0, f=1mhz - - 6.5 pf
1998. 6. 15 3/3 KN4400S/4401s revision no : 1 20 capacitance c (pf) 1 30 10 3 1 collector-base voltage v (v) cb c - v h - i c collector current i (ma) 1 3 10 30 1k fe dc current gain h 10 collector current i (ma) saturation voltage 3 1 be(sat) 30 10 c v , v - i fe c 300 1k 30 50 100 300 500 100 ce v =1v be(sat) ce(sat) c v ,v (v) ce(sat) 100 300 1k 0.01 0.03 0.05 0.1 0.3 0.5 1 3 5 10 v be(sat) ce(sat) v cb cb ob 100 300 3 5 10 f=100khz i =0 e i /i =10 c b
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